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Samsung 990 EVO Plus 2TB NVMe PCIe Gen 5.0 M.2 SSD – Up to 7,250 MB/s Read, 6,300 MB/s Write, Intelligent TurboWrite 2.0, HMB Technology 123-sum • Working Humidity: ≤80%

SKU 4730056353
4.3
Samsung 990 EVO Plus 2TB NVMe PCIe Gen 5.0 M.2 SSD – Up to 7,250 MB/s Read, 6,300 MB/s Write, Intelligent TurboWrite 2.0, HMB Technology 123-sum • Working Humidity: ≤80%
Samsung 990 EVO Plus 2TB NVMe PCIe Gen 5.0 M.2 SSD – Up to 7,250 MB/s Read, 6,300 MB/s Write, Intelligent TurboWrite 2.0, HMB Technology 123-sum • Working Humidity: ≤80%
Samsung 990 EVO Plus 2TB NVMe PCIe Gen 5.0 M.2 SSD – Up to 7,250 MB/s Read, 6,300 MB/s Write, Intelligent TurboWrite 2.0, HMB Technology 123-sum • Working Humidity: ≤80%
Samsung 990 EVO Plus 2TB NVMe PCIe Gen 5.0 M.2 SSD – Up to 7,250 MB/s Read, 6,300 MB/s Write, Intelligent TurboWrite 2.0, HMB Technology 123-sum • Working Humidity: ≤80%
Description

• Working Humidity: ≤80%

Model: CS-H9c-R100-8G55WKFL

Weight: Weight (mouse only): 0

5mm motorized lens

Samsung 990 EVO Plus 2TB NVMe PCIe Gen 5.0 M.2 SSD – Up to 7,250 MB/s Read, 6,300 MB/s Write, Intelligent TurboWrite 2.0, HMB Technology 123-sum • Working Humidity: ≤80%Capacity: 2TB Interface: PCIe Gen 5. 0 x2, backward compatible with PCIe Gen 4. 0 x4 and Gen 3. 0 x4 Form Factor: M. 2 2280 Sequential Read Speed: Up to 7,250 MB s Sequential Write Speed: Up to 6,300 MB s Random Read Speed (4K, QD32): Up to 1,000,000 IOPS Random Write Speed (4K, QD32): Up to 1,350,000 IOPS NAND Flash: Samsung V NAND TLC Controller: Samsung in house controller DRAM: DRAM less design with Host Memory Buffer (HMB) technology Endurance:

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